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| NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 MARCH 94 FEATURES * 160 Volt VCEO * Gain of 5K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX601B FOR GRAPHS FXT601B B C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE 180 160 10 4 1 1 -55 to +200 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Colllector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 180 160 10 0.01 10 0.1 10 0.75 0.85 1.7 1.5 5K 10K 5K 150 10K 20K 10K 250 1.1 1.2 1.9 1.7 100K MHz TYP. MAX. UNIT V V V A A A A CONDITIONS. IC=100A, IE=0 IC=10mA, IB=0* IE=100A, IC=0 VCB=160V VCB=160V,T amb =100C VEB=8V, IC=0 VCES=160V IC=0.5A, IB=5mA* IC=1A, IB=10mA* IC=1A, IB=10mA* IC=1A, VCE=5V* IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=100mA, VCE=10V f=20MHz Emitter Cut-Off Current IEBO ICES VCE(sat) VBE(sat) VBE(on) V V V V Static Forward Current hFE Transfer Ratio Transition Frequency fT *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-42 |
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